China develops silicon-free transistor for faster processors

Researchers in China have developed a new type of transistor made from 2D bismuth, which could revolutionize chip manufacturing. This silicon-free design may lead to much faster and more efficient processors, outperforming current silicon chips. The new transistor, called a gate-all-around field-effect transistor (GAAFET), can potentially work up to 40% faster than the best silicon processors. It is also expected to use 10% less energy. The findings were published in the journal Nature on February 13. Hailin Peng, a chemistry professor at Peking University, explained that this innovation represents a significant shift in transistor research. Instead of merely improving existing materials, the team is exploring new materials in their designs. The GAAFET transistor differs from traditional designs by wrapping the gate around all sides of the source, rather than just three. This configuration allows for better control of electrical flow, reducing energy loss and leading to quicker performance. Additionally, the use of bismuth oxyselenide in creating this transistor makes it more flexible and less brittle than silicon. It also enhances carrier mobility, enabling faster movement of electrons, which boosts overall efficiency.