Japan develops energy-efficient Magnetoresistive Random Access Memory technology

Scientists in Japan have made a breakthrough in memory technology. They have developed a faster and more energy-efficient type of storage called Magnetoresistive Random Access Memory, or MRAM. This new memory can help improve computing power while using much less energy. Traditional RAM can slow down when it's heavily used, but MRAM combines the speed of RAM with the ability to retain information without needing power. This makes MRAM a promising option for computers and smart devices, offering higher speeds and better endurance. The new MRAM technology is designed to overcome energy challenges that have limited previous versions. While MRAM can be energy-intensive, this new type uses less power when switching magnetic states. Researchers created a component called a "multiferroic heterostructure" that helps change the magnetization more efficiently. This innovation allows the memory to maintain its magnetic state without power, making it more reliable. Previous MRAM devices struggled with maintaining a stable state, but the new design keeps its form even when electric current is removed. The study, published in December 2024, shows the potential for this technology to power commercial computers more effectively. The new switching method is expected to have a longer lifespan and improved durability compared to current RAM systems, all while needing less energy.